Search Sanctioned Goods & HS Codes

6.6K items found

Imaging cameras, as follows: Note : The item above does not apply to television or video cameras, specially designed for television broadcasting. 1. Video cameras incorporating solid-state sensors, having a peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm and having all of the following: a. Having any of the following: 1. More than 4 × 10 6 ‘active pixels’ per solid-state array for monochrome (black and white) cameras; 2. More than 4 × 10 6 ‘active pixels’ per solid-state array for colour cameras incorporating three solid-state arrays; or 3. More than 12 × 10 6 ‘active pixels’ for solid-state array colour cameras incorporating one solid-state array; and b. Having any of the following: 1. Optical mirrors specified below; 2. Optical control equipment specified below; or 3. The capability for annotating internally generated ‘camera tracking data’; Technical notes: 1. For the purposes of this entry, digital video cameras should be evaluated by the maximum number of ‘active pixels’ used for capturing moving images. 2. For the purposes of this entry, ‘camera tracking data’ is the information necessary to define camera line of sight orientation with respect to the Earth. This includes: (a) the horizontal angle the camera line of sight makes with respect to the Earth's magnetic field direction; and (b) the vertical angle between the camera line of sight and the Earth's horizon.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.006
Code: 6A003
Imaging cameras, as follows: Note : The item above does not apply to television or video cameras, specially designed for television broadcasting. 1. Video cameras incorporating solid-state sensors, having a peak response in the wavelength range exceeding 10 nm, but not exceeding 30 000 nm and having all of the following: a. Having any of the following: 1. More than 4 × 10 6 ‘active pixels’ per solid-state array for monochrome (black and white) cameras; 2. More than 4 × 10 6 ‘active pixels’ per solid-state array for colour cameras incorporating three solid-state arrays; or 3. More than 12 × 10 6 ‘active pixels’ for solid-state array colour cameras incorporating one solid-state array; and b. Having any of the following: 1. Optical mirrors specified below; 2. Optical control equipment specified below; or 3. The capability for annotating internally generated ‘camera tracking data’; Technical notes: 1. For the purposes of this entry, digital video cameras should be evaluated by the maximum number of ‘active pixels’ used for capturing moving images. 2. For the purposes of this entry, ‘camera tracking data’ is the information necessary to define camera line of sight orientation with respect to the Earth. This includes: (a) the horizontal angle the camera line of sight makes with respect to the Earth's magnetic field direction; and (b) the vertical angle between the camera line of sight and the Earth's horizon.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.006
Code: 6A003
High-speed cinema recording cameras using any film format from 8 mm to 16 mm inclusive, in which the film is continuously advanced throughout the recording period, and that are capable of recording at framing rates exceeding 13 150 frames/s; Note : The item above does not apply to cinema recording cameras designed for civil purposes. 2. Mechanical high-speed cameras, in which the film does not move, capable of recording at rates exceeding 1 000 000 frames/s for the full framing height of 35 mm film, or at proportionately higher rates for lesser frame heights, or at proportionately lower rates for greater frame heights; 3. Mechanical or electronic streak cameras as follows: a. Mechanical streak cameras having writing speeds exceeding 10 mm/μs; b. Electronic streak cameras having temporal resolution better than 50 ns; 4. Electronic framing cameras having a speed exceeding 1 000 000 frames/s; 5. Electronic cameras having all of the following: a. An electronic shutter speed (gating capability) of less than 1 μs per full frame; and b. A read-out time allowing a framing rate of more than 125 full frames per second; 6. Plug-ins having all of the following characteristics: a. Specially designed for instrumentation cameras which have modular structures and which are specified in this item; and b. Enabling these cameras to meet the characteristics specified above, according to the manufacturer's specifications;
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.005
Code: 6A003
High-speed cinema recording cameras using any film format from 8 mm to 16 mm inclusive, in which the film is continuously advanced throughout the recording period, and that are capable of recording at framing rates exceeding 13 150 frames/s; Note : The item above does not apply to cinema recording cameras designed for civil purposes. 2. Mechanical high-speed cameras, in which the film does not move, capable of recording at rates exceeding 1 000 000 frames/s for the full framing height of 35 mm film, or at proportionately higher rates for lesser frame heights, or at proportionately lower rates for greater frame heights; 3. Mechanical or electronic streak cameras as follows: a. Mechanical streak cameras having writing speeds exceeding 10 mm/μs; b. Electronic streak cameras having temporal resolution better than 50 ns; 4. Electronic framing cameras having a speed exceeding 1 000 000 frames/s; 5. Electronic cameras having all of the following: a. An electronic shutter speed (gating capability) of less than 1 μs per full frame; and b. A read-out time allowing a framing rate of more than 125 full frames per second; 6. Plug-ins having all of the following characteristics: a. Specially designed for instrumentation cameras which have modular structures and which are specified in this item; and b. Enabling these cameras to meet the characteristics specified above, according to the manufacturer's specifications;
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.005
Code: 6A003
Cameras, systems or equipment, and components therefor, as follows: (a) Instrumentation cameras and specially designed components therefor, as follows: Note : Instrumentation cameras, specified above, with modular structures should be evaluated by their maximum capability, using plug-ins available according to the camera manufacturer's specifications.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.004
Code: 6A003
Cameras, systems or equipment, and components therefor, as follows: (a) Instrumentation cameras and specially designed components therefor, as follows: Note : Instrumentation cameras, specified above, with modular structures should be evaluated by their maximum capability, using plug-ins available according to the camera manufacturer's specifications.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A6.004
Code: 6A003
‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.044
Code: 3C006
‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.044
Code: 3C006
Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.043
Code: 3C005
Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.043
Code: 3C005
Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.042
Code: 3C004
Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.042
Code: 3C004
Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.041
Code: 3C003
Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.041
Code: 3C003
Resist materials as follows and ‘substrates’ coated with the following resists: (a) Resists designed for semiconductor lithography as follows: 1. Positive resists adjusted (optimized) for use at wavelengths less than 245 nm but equal to or greater than 15 nm; 2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm; (b) All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm 2 or better; (c) All resists optimized for surface imaging technologies; (d) All resists designed or optimized for use with imprint lithography equipment capable of producing features of 45 nm or less that use either a thermal or photo-curable process.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.040
Code: 3C002
Resist materials as follows and ‘substrates’ coated with the following resists: (a) Resists designed for semiconductor lithography as follows: 1. Positive resists adjusted (optimized) for use at wavelengths less than 245 nm but equal to or greater than 15 nm; 2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm; (b) All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm 2 or better; (c) All resists optimized for surface imaging technologies; (d) All resists designed or optimized for use with imprint lithography equipment capable of producing features of 45 nm or less that use either a thermal or photo-curable process.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.040
Code: 3C002
Hetero-epitaxial materials consisting of a ‘substrate’ having stacked epitaxially grown multiple layers with any of the following: (a) Silicon (Si); (b) Germanium (Ge); (c) Silicon Carbide (SiC); or (d) ‘III/V compounds’ of gallium or indium. Note : This item does not apply to a ‘substrate’ having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.039
Code: 3C001
Hetero-epitaxial materials consisting of a ‘substrate’ having stacked epitaxially grown multiple layers with any of the following: (a) Silicon (Si); (b) Germanium (Ge); (c) Silicon Carbide (SiC); or (d) ‘III/V compounds’ of gallium or indium. Note : This item does not apply to a ‘substrate’ having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.039
Code: 3C001
Test equipment specially designed for testing finished or unfinished semiconductor and microwave devices as follows and specially designed components and accessories therefor: (a) For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz; (b) For testing microwave integrated circuits specified above.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.038
Code: 3B002
Test equipment specially designed for testing finished or unfinished semiconductor and microwave devices as follows and specially designed components and accessories therefor: (a) For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz; (b) For testing microwave integrated circuits specified above.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A3.038
Code: 3B002
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.009
Code: 2B209
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.009
Code: 2B209
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.009
Code: 2B109
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.009
Code: 2B109
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.009
Code: 2B009
Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with ‘numerical control’ units or a computer control and having all of the following: (a) Three or more axes which can be coordinated simultaneously for ‘contouring control’; and (b) A roller force more than 60 kN. Technical note : Machines combining the functions of spin-forming and flow-forming are regarded as flow-forming machines.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.009
Code: 2B009
Assemblies or units, specially designed for machine tools, or dimensional inspection or measuring systems and equipment, as follows: (a) Linear position feedback units having an overall ‘accuracy’ less (better) than (800 + (600 × L/1 000 )) nm (L equals the effective length in mm); (b) Rotary position feedback units having an ‘accuracy’ less (better) than 0,00025 °; or (c) ‘Compound rotary tables’ and ‘tilting spindles’, for use with machine tools to or above the levels specified by this category.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.008
Code: 2B008
Assemblies or units, specially designed for machine tools, or dimensional inspection or measuring systems and equipment, as follows: (a) Linear position feedback units having an overall ‘accuracy’ less (better) than (800 + (600 × L/1 000 )) nm (L equals the effective length in mm); (b) Rotary position feedback units having an ‘accuracy’ less (better) than 0,00025 °; or (c) ‘Compound rotary tables’ and ‘tilting spindles’, for use with machine tools to or above the levels specified by this category.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.008
Code: 2B008
‘Robots’ having any of the following characteristics and specially designed controllers and ‘end-effectors’ therefor: (a) Capable in real time of full three-dimensional image processing or full three-dimensional ‘scene analysis’ to generate or modify ‘programs’ or to generate or modify numerical program data; Technical note: The ‘scene analysis’ limitation does not include approximation of the third dimension by viewing at a given angle, or limited greyscale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D). (b) Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; (c) Specially designed or rated as radiation-hardened to withstand greater than 5 × 10 3 Gy (Si) without operational degradation; or (d) Specially designed to operate at altitudes exceeding 30 000 m.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.007
Code: 2B207
‘Robots’ having any of the following characteristics and specially designed controllers and ‘end-effectors’ therefor: (a) Capable in real time of full three-dimensional image processing or full three-dimensional ‘scene analysis’ to generate or modify ‘programs’ or to generate or modify numerical program data; Technical note: The ‘scene analysis’ limitation does not include approximation of the third dimension by viewing at a given angle, or limited greyscale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D). (b) Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; (c) Specially designed or rated as radiation-hardened to withstand greater than 5 × 10 3 Gy (Si) without operational degradation; or (d) Specially designed to operate at altitudes exceeding 30 000 m.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.007
Code: 2B207
‘Robots’ having any of the following characteristics and specially designed controllers and ‘end-effectors’ therefor: (a) Capable in real time of full three-dimensional image processing or full three-dimensional ‘scene analysis’ to generate or modify ‘programs’ or to generate or modify numerical program data; Technical note: The ‘scene analysis’ limitation does not include approximation of the third dimension by viewing at a given angle, or limited greyscale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D). (b) Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; (c) Specially designed or rated as radiation-hardened to withstand greater than 5 × 10 3 Gy (Si) without operational degradation; or (d) Specially designed to operate at altitudes exceeding 30 000 m.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.007
Code: 2B007
‘Robots’ having any of the following characteristics and specially designed controllers and ‘end-effectors’ therefor: (a) Capable in real time of full three-dimensional image processing or full three-dimensional ‘scene analysis’ to generate or modify ‘programs’ or to generate or modify numerical program data; Technical note: The ‘scene analysis’ limitation does not include approximation of the third dimension by viewing at a given angle, or limited greyscale interpretation for the perception of depth or texture for the approved tasks (2 1/2 D). (b) Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; (c) Specially designed or rated as radiation-hardened to withstand greater than 5 × 10 3 Gy (Si) without operational degradation; or (d) Specially designed to operate at altitudes exceeding 30 000 m.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.007
Code: 2B007
Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows: (a) Chemical vapour deposition (CVD) production equipment having all of the following: 1. A process modified for one of the following: a. Pulsating CVD; b. Controlled nucleation thermal deposition (CNTD); or c. Plasma enhanced or plasma assisted CVD; and 2. Having any of the following: a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or b. Incorporating in situ coating thickness control; (b) Ion implantation production equipment having beam currents of 5 mA or more; (c) Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following: 1. A liquid pool level ‘laser’ control system which regulates precisely the ingots feed rate; or 2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionized atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements; (d) Plasma spraying production equipment having any of the following: 1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or 2. Incorporating in situ coating thickness control; (e) Sputter deposition production equipment capable of current densities of 0,1 mA/mm 2 or higher at a deposition rate of 15 μm/h or more; (f) Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode; or (g) Ion plating production equipment capable of in situ measurement of any of the following: 1. Coating thickness on the substrate and rate control; or 2. Optical characteristics.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.005
Code: 2B005
Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows: (a) Chemical vapour deposition (CVD) production equipment having all of the following: 1. A process modified for one of the following: a. Pulsating CVD; b. Controlled nucleation thermal deposition (CNTD); or c. Plasma enhanced or plasma assisted CVD; and 2. Having any of the following: a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or b. Incorporating in situ coating thickness control; (b) Ion implantation production equipment having beam currents of 5 mA or more; (c) Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following: 1. A liquid pool level ‘laser’ control system which regulates precisely the ingots feed rate; or 2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionized atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements; (d) Plasma spraying production equipment having any of the following: 1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or 2. Incorporating in situ coating thickness control; (e) Sputter deposition production equipment capable of current densities of 0,1 mA/mm 2 or higher at a deposition rate of 15 μm/h or more; (f) Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode; or (g) Ion plating production equipment capable of in situ measurement of any of the following: 1. Coating thickness on the substrate and rate control; or 2. Optical characteristics.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.005
Code: 2B005
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.004
Code: 2B204
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: IRKP
Program: KP
EU Code: IX.A2.004
Code: 2B204
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.004
Code: 2B104
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.004
Code: 2B104
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.004
Code: 2B004
Hot ‘isostatic presses’ having all of the following, and specially designed components and accessories therefor: (a) A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and (b) Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1 773 K (1 500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products.
Authority: EU
Prohibited Supply To: KP
Program: KP
EU Code: IX.A2.004
Code: 2B004

Goods search

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‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.

Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.

Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.

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‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

‘Substrates’ specified in item 5 above with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.

Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note : The item above does not apply to hydrides containing 20 % molar or more of inert gases or hydrogen.

Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.

Organo-inorganic compounds: (a) Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; (b) Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %.