Other semiconductor ‘lasers’, as follows: Notes: 1. Includes semiconductor ‘lasers’ having optical output connectors (e.g., fibre-optic pigtails). 2. The status of semiconductor ‘lasers’ specially designed for other equipment is determined by the status of the other equipment. a. Individual single-transverse mode semiconductor ‘lasers’ having any of the following: 1. Wavelength equal to or less than 1 510 nm and average or CW output power, exceeding 1,5 W; or 2. Wavelength greater than 1 510 nm and average or CW output power, exceeding 500 mW; b. Individual, multiple-transverse mode semiconductor ‘lasers’ having any of the following: 1. Wavelength of less than 1 400 nm and average or CW output power, exceeding 15 W; 2. Wavelength equal to or greater than 1 400 nm and less than 1 900 nm and average or CW output power, exceeding 2,5 W; or 3. Wavelength equal to or greater than 1 900 nm and average or CW output power, exceeding 1 W; c. Individual semiconductor ‘laser’‘bars’ having any of the following: 1. Wavelength of less than 1 400 nm and average or CW output power, exceeding 100 W; 2. Wavelength equal to or greater than 1 400 nm and less than 1 900 nm and average or CW output power, exceeding 25 W; or 3. Wavelength equal to or greater than 1 900 nm and average or CW output power, exceeding 10 W; d. Semiconductor ‘laser’‘stacked arrays’ (two-dimensional arrays) having any of the following: 1. Wavelength less than 1 400 nm and having any of the following: a. Average or CW total output power less than 3 kW and having average or CW output ‘power density’ greater than 500 W/cm 2 ; b. Average or CW total output power equal to or exceeding 3 kW but less than or equal to 5 kW, and having average or CW output ‘power density’ greater than 350W/cm 2 ; c. Average or CW total output power exceeding 5 kW; d. Peak pulsed ‘power density’ exceeding 2 500 W/cm 2 ; or Note : Item d. does not apply to epitaxially fabricated monolithic devices. e. Spatially coherent average or CW total output power, greater than 150 W; 2. Wavelength greater than or equal to 1 400 nm but less than 1 900 nm, and having any of the following: a. Average or CW total output power less than 250 W and average or CW output ‘power density’ greater than 150 W/cm 2 ; b. Average or CW total output power equal to or exceeding 250 W but less than or equal to 500 W, and having average or CW output ‘power density’ greater than 50W/cm 2 ; c. Average or CW total output power exceeding 500 W; d. Peak pulsed ‘power density’ exceeding 500 W/cm 2 ; or Note : Item d. does not apply to epitaxially fabricated monolithic devices. e. Spatially coherent average or CW total output power, exceeding 15 W; 3. Wavelength greater than or equal to 1 900 nm and having any of the following: a. Average or CW output ‘power density’ greater than 50 W/cm 2 ; b. Average or CW output power greater than 10 W; or c. Spatially coherent average or CW total output power, exceeding 1,5W; or 4. At least one ‘laser’‘bar’ specified above; Technical note: For the purposes of this category ‘power density’ means the total ‘laser’ output power divided by the emitter surface area of the ‘stacked array’.