Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C. | Sanctions Finder

Last Updated: April 20, 2026

Last Updated: April 20, 2026

Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor ‘substrates’, or ingots, boules or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20 °C.

Code

3C005

EU Code

IX.A3.043

Category

ANNEX II - Goods and technology referred to in points (a) and (c) of Article 3(1) and in Article 7

Subcategory

IX.A3.ELECTRONICS

Prohibited Supply To

KP

Authority

EU

Document

EU Regulation 2017/1509

Program information

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