Equipment for the inspection or testing of electronic components and materials, and specially designed components therefor. a. Equipment specially designed for the inspection or testing of electron tubes, optical elements and specially designed components therefor, controlled by entry 3A001 of Annex I of the Dual-Use Regulation or 3A991; b. Equipment specially designed for the inspection or testing of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: : b.1. “Stored program controlled” inspection equipment for the automatic detection of defects, errors or contaminants of 0.6 μm or less in or on processed wafers, “substrates”, other than printed circuit boards or integrated circuits, using optical image acquisition techniques for pattern comparison; : b.2. Specially designed “stored program controlled” measuring and analysis equipment, as follows: b.2.a. Specially designed for the measurement of oxygen or carbon content in semiconductor materials; b.2.b. Equipment for line width measurement with a resolution of 1 μm or finer; b.2.c. Specially designed flatness measurement instruments capable of measuring deviations from flatness of 10 μm or less with a resolution of 1 μm or finer. b.3. “Stored program controlled” wafer probing equipment having any of the following: b.3.a. Positioning accuracy finer than 3.5 μm; b.3.b. Capable of testing devices having more than 68 terminals; b.3.c. Capable of testing at a frequency exceeding 1 GHz; b.4. Test equipment as follows: b.4.a. “Stored program controlled” equipment, specially designed for testing discrete semiconductor devices and unencapsulated dice, capable of testing at frequencies exceeding 18 GHz; : b.4.b. “Stored program controlled” equipment specially designed for testing integrated circuits and “electronic assemblies” thereof, capable of functional testing: b.4.b.1. At a ‘pattern rate’ exceeding 20 MHz; b.4.b.2. At a ‘pattern rate’ exceeding 10 MHz but not exceeding 20 MHz and capable of testing packages of more than 68 terminals. b.4.c. Equipment specially designed for determining the performance of focal-plane arrays at wavelengths of more than 1,200 nm, using “stored program controlled” measurements or computer aided evaluation and having any of the following: b.4.c.1. Using scanning light spot diameters of less than 0.12 mm; b.4.c.2. Designed for measuring photosensitive performance parameters and for evaluating frequency response, modulation transfer function, uniformity of responsivity or noise; b.4.c.3. Designed for evaluating arrays capable of creating images with more than 32 x 32 line elements; b.5. Electron beam test systems designed for operation at 3 keV or below, or “laser” beam systems, for non-contact probing of powered-up semiconductor devices having any of the following: b.5.a. Stroboscopic capability with either beam blanking or detector strobing; b.5.b. An electron spectrometer for voltage measurements with a resolution of less than 0.5 V; b.5.c. Electrical tests fixtures for performance analysis of integrated circuits; b.6. “Stored program controlled” multifunctional focused ion beam systems specially designed for manufacturing, repairing, physical layout analysis and testing of masks or semiconductor devices and having either of the following: b.6.a. Target-to-beam position feedback control precision of 1 μm or finer; b.6.b. Digital-to-analogue conversion accuracy exceeding 12 bit; b.7. Particle measuring systems employing “lasers” designed for measuring particle size and concentration in air having both of the following: b.7.a. Capable of measuring particle sizes of 0.2 μm or less at a flow rate of 0.02832 m3 per minute or more; b.7.b. Capable of characterising Class 10 clean air or better.