Equipment for the manufacture of electronic components and materials, and specially designed components therefor. a. Equipment specially designed for the manufacture of electron tubes, optical elements and components controlled by entry 3A001 of Annex I of the Dual-Use Regulation, or entry 3A991; b. Equipment for the manufacture of semiconductor devices, integrated circuits and “electronic assemblies”, as follows, and systems incorporating or having the characteristics of such equipment: : b.1. Equipment for the processing of materials for the manufacture of devices and components, as specified in the heading of 3B991.b, as follows: : b.1.a. Equipment specially designed for producing polycrystalline silicon and materials controlled by entry 3A001 of Annex I of the Dual-Use Regulation; b.1.b. Equipment specially designed for purifying or processing III/V and II/VI semiconductor materials controlled by entries 3C001, 3C002, 3C003, 3C004, or 3C005 of Annex I of the Dual-Use Regulation except crystal pullers, for which see 3B991.b.1.c below; b.1.c. Crystal pullers and furnaces, as follows: : b.1.c.1. Annealing or recrystallising equipment other than constant temperature furnaces employing high rates of energy transfer capable of processing wafers at a rate exceeding 0.005 m per minute; 2 b.1.c.2. “Stored program controlled” crystal pullers having any of the following: b.1.c.2.a. Rechargeable without replacing the crucible container; b.1.c.2.b. Capable of operation at pressures above 2.5 x 10 Pa; 5 b.1.c.2.c. Capable of pulling crystals of a diameter exceeding 100 mm; b.1.d. “Stored program controlled” equipment for epitaxial growth having any of the following: b.1.d.1. Capable of producing silicon layer with a thickness uniform to less than ± 2.5% across a distance of 200 mm or more; b.1.d.2. Capable of producing a layer of any material other than silicon with a thickness uniformity across the wafer of equal to or better than ± 3.5%; or b.1.d.3. Capable of rotating individual wafers during processing; b.1.e. Molecular beam epitaxial growth equipment; b.1.f. Magnetically enhanced ‘sputtering’ equipment with specially designed integral load locks capable of transferring wafers in an isolated vacuum environment; b.1.g. Equipment specially designed for ion implantation, ion-enhanced or photo-enhanced diffusion, having any of the following: b.1.g.1. Patterning capability; b.1.g.2. Beam energy (accelerating voltage) exceeding 200 keV; b.1.g.3 Optimised to operate at a beam energy (accelerating voltage) of less than 10 keV; b.1.g.4. Capable of high energy oxygen implant into a heated “substrate”; b.1.h. “Stored program controlled” equipment for selective removal (etching) by means of anisotropic dry methods (e.g., plasma), as follows: b.1.h.1. ‘Batch types’ having either of the following: b.1.h.1.a. End-point detection, other than optical emission spectroscopy types; b.1.h.1.b. Reactor operational (etching) pressure of 26.66 Pa or less; b.1.h.2. ‘Single wafer types’ having any of the following: b.1.h.2.a. End-point detection, other than optical emission spectroscopy types; b.1.h.2.b. Reactor operational (etching) pressure of 26.66 Pa or less; b.1.h.2.c. Cassette-to-cassette and load locks wafer handling; : b.1.i. “Chemical vapor deposition” (CVD) equipment, e.g., plasma-enhanced CVD (PECVD) or photo-enhanced CVD, for semiconductor device manufacturing, having either of the following capabilities, for deposition of oxides, nitrides, metals or polysilicon: b.1.i.1. “Chemical vapor deposition” equipment operating below 10 Pa; or 5 b.1.i.2. PECVD equipment operating either below 60 Pa (450 millitorr) or having automatic cassette-to-cassette and load lock wafer handling; : b.1.j. Electron beam systems specially designed or modified for mask making or semiconductor device processing having any of the following: b.1.j.1. Electrostatic beam deflection; b.1.j.2. Shaped, non-Gaussian beam profile; b.1.j.3. Digital-to-analogue conversion rate exceeding 3 MHz; b.1.j.4. Digital-to-analogue conversion accuracy exceeding 12 bit; b.1.j.5. Target-to-beam position feedback control precision of 1 μm or finer; : b.1.k. Surface finishing equipment for the processing of semiconductor wafers as follows: b.1.k.1. Specially designed equipment for backside processing of wafers thinner than 100 μm and the subsequent separation thereof; b.1.k.2. Specially designed equipment for achieving a surface roughness of the active surface of a processed wafer with a two-sigma value of 2 μm or less, total indicator reading (TIR); : b.1.l. Interconnection equipment which includes common single or multiple vacuum chambers specially designed to permit the integration of any equipment controlled by 3B991 into a complete system; b.1.m. “Stored program controlled” equipment using “lasers” for the repair or trimming of “monolithic integrated circuits” with either of the following: b.1.m.1. Positioning accuracy less than ± 1 μm; or b.1.m.2. Spot size (kerf width) less than 3 μm. b.2. ‘Masks’, ‘mask’ “substrates,” mask-making equipment and image transfer equipment for the manufacture of devices and components as specified in the heading of 3B991, as follows: : b.2.a. Finished masks, reticles and designs therefor, except: b.2.a.1. Finished masks or reticles for the production of integrated circuits not controlled by entry 3A001 of Annex I of the Dual-Use Regulation; b.2.a.2. Masks or reticles, having both of the following: b.2.a.2.a. Their design is based on geometries of 2.5 μm or more; and b.2.a.2.b. The design does not include special features to alter the intended use by means of production equipment or “software”; b.2.b. Mask “substrates” as follows: b.2.b.1. Hard surface (e.g., chromium, silicon, molybdenum) coated “substrates” (e.g., glass, quartz, sapphire) for the preparation of masks having dimensions exceeding 125 mm x 125 mm; b.2.b.2. “Substrates” specially designed for X-ray masks; b.2.c. Equipment, other than general purpose computers, specially designed for computer aided design (CAD) of semiconductor devices or integrated circuits; b.2.d. Equipment or machines, as follows, for mask or reticle fabrication: : b.2.d.1. Photo-optical step and repeat cameras capable of producing arrays larger than 100 mm x 100 mm, or capable of producing a single exposure larger than 6 mm x 6 mm in the image (i.e., focal) plane, or capable of producing line widths of less than 2.5 μm in the photoresist on the “substrate”; b.2.d.2. Mask or reticle fabrication equipment using ion or “laser” beam lithography capable of producing line widths of less than 2.5 μm; or b.2.d.3. Equipment or holders for altering masks or reticles or adding pellicles to remove defects; b.2.e. “Stored program controlled” equipment for the inspection of masks, reticles or pellicles with: b.2.e.1. A resolution of 0.25 μm or finer; and b.2.e.2. A precision of 0.75 μm or finer over a distance in one or two coordinates of 63.5 mm or more; b.2.f. Align and expose equipment for wafer production using photo-optical or X-ray methods, e.g., lithography equipment, including both projection image transfer equipment and step and repeat (direct step on wafer) or step and scan (scanner) equipment, capable of performing any of the following: : b.2.f.1. Production of a pattern size of less than 2.5 μm; b.2.f.2. Alignment with a precision finer than ± 0.25 μm (3 sigma); b.2.f.3. Machine-to-machine overlay no better than ± 0.3 μm; or b.2.f.4. A light source wavelength shorter than 400 nm; b.2.g. Electron beam, ion beam or X-ray equipment for projection image transfer capable of producing patterns less than 2.5 μm; : b.2.h. Equipment using “lasers” for direct write on wafers capable of producing patterns less than 2.5 μm. b.3. Equipment for the assembly of integrated circuits, as follows: b.3.a. “Stored program controlled” die bonders having all of the following: b.3.a.1. Specially designed for “hybrid integrated circuits”; b.3.a.2. X-Y stage positioning travel exceeding 37.5 x 37.5 mm; b.3.a.3. Placement accuracy in the X-Y plane of finer than ± 10 μm; b.3.b. “Stored program controlled” equipment for producing multiple bonds in a single operation (e.g., beam lead bonders, chip carrier bonders, tape bonders); b.3.c. Semi-automatic or automatic hot cap sealers, in which the cap is heated locally to a higher temperature than the body of the package, specially designed for ceramic microcircuit packages controlled by entry 3A001 of Annex I of the Dual-Use Regulation and that have a throughput equal to or more than one package per minute. b.4. Filters for clean rooms capable of providing an air environment of 10 or less particles of 0.3 μm or smaller per 0.02832 m3 and filter materials therefor.