Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor: (a) Equipment designed for ion implantation and having any of the following: 1. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant; 2. Direct write capability; 3. A beam energy of 65 keV or more and a beam current of 45 mA or more for high-energy oxygen implant into a heated semiconductor material ‘substrate’; or 4. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material ‘substrate’ heated to 600 °C or greater; (b) Lithography equipment as follows and imprint lithography equipment capable of producing features of 45 nm or less: 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following: a. A light source wavelength shorter than 193 nm; or b. Capable of producing a pattern with a ‘Minimum Resolvable Feature size’ (MRF) of 45 nm or less; Technical note : The ‘Minimum Resolvable Feature size’ (MRF) is calculated by the following formula: where the K factor = 0,35 (c) Equipment specially designed for mask using deflected focused electron beam, ion beam or ‘laser’ beam;