1. Integrated circuits designed or rated as radiation hardened to withstand any of the following: a. A total dose of 5 × 10 3 Gy (silicon) or higher; b. A dose rate upset of 5 × 10 6 Gy (silicon)/s or higher; or c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 10 13 n/cm 2 or higher on silicon, or its equivalent for other materials; Note: 3A001.a.1.c. does not control Metal Insulator Semiconductors (MIS).

Last Updated: April 11, 2026

3A001

M18A1

3A - Systems, Equipment and Components

EU Regulation No 267/2012

‘Detectors’ specially designed or modified to protect rocket systems and unmanned aerial vehicles against nuclear effects (e.g. Electromagnetic Pulse (EMP), X-rays, combined blast and thermal effects), and usable for the systems specified in 1.A.Technical Note:A ‘detector’ is defined as a mechanical, electrical, optical or chemical device that automatically identifies and records, or registers a stimulus such as an environmental change in pressure or temperature, an electrical or electromagnetic signal or radiation from a radioactive material. This includes devices that sense by one time operation or failure.
“Radiation Hardened”“microcircuits” usable in protecting rocket systems and unmanned aerial vehicles against nuclear effects (e.g. Electromagnetic Pulse (EMP), X-rays, combined blast and thermal effects), and usable for the systems specified in 1.A.

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